PART |
Description |
Maker |
STD4525NL STU4525NL |
N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics
|
2SK3476 |
Field Effect Transistor Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
HN1K05FU |
Field Effect Transistor Silicon N Channel MOS Type For Portable Devices High Speed Switching Applications Interface Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦,1.0 GHz的GOLDMOS场效应晶体管 35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor 35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
2SK3471 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
2SK3407 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
MTD3055VL MTD3055VLNL |
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 From old datasheet system M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|
PTF10137 |
12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦,1.0 GHz的GOLDMOS场效应晶体管 12 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|